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DOI:
飞控与探测:2019,2(1):56-60
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高垂直度和低沉积的MEMS陀螺梳齿结构释放工艺
(北京航天控制仪器研究所·北京·100039)
Study of Comb-shaped Structure Relaxation Process with High Vertical Degree and Less Production
(Beijing Institute of Aerospace Control Instruments, Beijing 100039)
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中文摘要: 梳齿型微机电系统(MEMS)陀螺的释放要求结构具有垂直度高、释放过程沉积聚合物少的特点,通过优化深硅刻蚀的工艺参数,包括钝化气体八氟环丁烷(C4F8)的流量、衬底温度、刻蚀气体六氟化硫(SF6)的流量和钝化气体C4F8的压力,实现了结构垂直度为90.0°、支撑层表面沉积物厚度为87.1nm的梳齿结构释放工艺。深硅刻蚀工艺的优化为高性能MEMS陀螺的加工提供了基础。
Abstract:The comb shaped MEMS gyroscopes should be made with high vertical degree and less deposition polymer. By optimizing the parameters of deep silicon etching including C4F8 flow, platen temperature, SF6 flow and C4F8 pressure, the structure with vertical degree of 90.0° and production thickness of 87.1nm can be achieved. The optimization of deep silicon etching process is the basic for the MEMS gyroscopes manufacturing with high properties.
文章编号:20190109     中图分类号:    文献标志码:
基金项目:装发部装备预研共用技术(41417010302);科技部重大共性关键技术课题(2016YFB0501003)
引用文本:
梁德春,庄海涵,李新坤,刘福民.高垂直度和低沉积的MEMS陀螺梳齿结构释放工艺[J].飞控与探测,2019,2(1):56-60.

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